Direct-current measurements of oxide and interface traps on oxidized silicon

Abstract

A direct-current current-voltage (DCIV) measurement technique of interface and oxide traps on oxidized silicon is demonstrated. It uses the gate-controlled parasitic bipolar junction transistor of a metal-oxide-silicon field-effect transistor in a p/n junction isolation well to monitor the change of the oxide and interface trap density. The dc base and collector currents are the monitors, hence, this technique is more sensitive and reliable than the traditional ac methods for determination of fundamental kinetic rates and transistor degradation mechanisms, such as charge pumping.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>