IEEE Transactions on Electron Devices · 1995 · 183 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceInterface ScienceMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesSemiconductor ReliabilityCharge PumpingCurrent-voltage RelationsInterface Trap DensityInterface Trap Density MeasurementInterface TrapsSiliconSilicon OxidationTraps
A direct-current current-voltage (DCIV) measurement technique of interface and oxide traps on oxidized silicon is demonstrated. It uses the gate-controlled parasitic bipolar junction transistor of a metal-oxide-silicon field-effect transistor in a p/n junction isolation well to monitor the change of the oxide and interface trap density. The dc base and collector currents are the monitors, hence, this technique is more sensitive and reliable than the traditional ac methods for determination of fundamental kinetic rates and transistor degradation mechanisms, such as charge pumping.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Fermi Level Position at Metal-Semiconductor Interfaces
Carver Mead, W. G. Spitzer · Physical Review · 1964 · 477 citations