The inversion layer emitter thyristor - a novel power device concept

Abstract

A novel MOS-controlled power device termed the Inversion Layer Emitter Thyristor (ILET) is proposed. The principle of operation is based on a new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. The device operates in a combined thyristor-IGBT mode having the thyristor emitter formed by an inversion layer. In the on-state the effective channel of the MOS structure is of sub-micrometre order, and does not affect the off-state voltage blocking capability of the device.