IEEE Transactions on Electron Devices · 1995 · 26 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingHigh-frequency Semiconductor DevicesMicrowave Device SimulationOptical Properties Of SemiconductorsBackside IlluminationCutoff FrequencyElectrode Spacing EffectsHeterojunction DevicesHeterostructure Device ModelingLayer Thickness EffectsMicrowave ModelingResponsivity
Using a 2-D bipolar physical model we highlight the main parameters that govern the long-wavelength MSM PD performance (cutoff frequency and responsivity). This covers applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also report that using a backside illumination technique and a thin absorbing layer we can reach a cutoff frequency as high as 65 GHz with a responsivity of 0.2 A/W.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
21
105-GHz bandwidth metal-semiconductor-metal photodiode
Bart J. Van Zeghbroeck, W. Patrick, J.-M. Halbout et al. · IEEE Electron Device Letters · 1988 · 132 citations