Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimensional bipolar physical model

I.S. Ashour, H. El Kadi, K. Sherif, Jean‐Pierre Vilcot, D. Décoster

IEEE Transactions on Electron Devices · 1995 · 26 citations · 21 references

Concepts

Abstract

Using a 2-D bipolar physical model we highlight the main parameters that govern the long-wavelength MSM PD performance (cutoff frequency and responsivity). This covers applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also report that using a backside illumination technique and a thin absorbing layer we can reach a cutoff frequency as high as 65 GHz with a responsivity of 0.2 A/W.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

21