The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga)As photocathodes

Abstract

It has been found that the temperature T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</inf> at which Cs and O are applied to (In,Ga)As negative electron affinity photocathodes has a strong influence on the surface escape probability B. Over the temperature range investigated, 25-100°C, B changes by a factor of approximately 30.