IEEE Transactions on Nuclear Science · 1993 · 15 citations · 2 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationField-effect TransistorsIntegrated Circuit DesignNoise In Electronic DevicesNoise In Semiconductor DevicesCharge-sensitive AmplifiersHadron AcceleratorsIntegrated Circuit NoiseJunction Field-effect TransistorsNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsRadiation HardnessThermal Noise
The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based on them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described. Tests have demonstrated that the noise behavior of the preamplifier is close to that which would be expected if the total noise referred at the preamplifier input were the thermal noise in the input JFET device; that is, the monolithic circuit approaches the noise performances of a hybrid preamplifier using discrete JFETs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Physics of Semiconductor Devices
Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations