IEEE Photonics Technology Letters · 2004 · 71 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated PhotonicsOptical SourcesPhotonic Integrated CircuitsSemiconductor Device MaterialsSemiconductor LasersHigh-power Semiconductor LasersIntegrated LasersIntegrated Semiconductor LasersSingle-mode OperationSingle-mode Semiconductor LasersThermal ResistanceVertical-cavity Surface-emitting Lasers
We demonstrate 1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9/spl deg/. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70/spl deg/C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.
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High efficiency long wavelength VCSEL on InP grown by MOCVD
Nobuhiko Nishiyama, C. Caneau, G. M. Gur’yanov et al. · Electronics Letters · 2003 · 81 citations