Vertical-cavity surface-emitting laser diodes at1.55 µmwith large output power and high operation temperature

Abstract

Improved 1.55 µm InGaAlAs/InP vertical-cavity surface-emitting lasers were fabricated in the buried tunnel junction technology yielding sub-mA threshold currents, 0.9 V threshold voltage, 10–40 Ω series resistance, output power up to 7 mW (20°C, CW) and CW operation up to > 110°C.