C.-A. Berseth

1.5-mW Single-Mode Operation of Wafer-Fused 1550-nm VCSELs

A. Syrbu, A. Mircéa, A. Mereuta et al. · IEEE Photonics Technology Letters · 2004 · 71 citations · Full text

Photonics, Electrical Engineering, Optical Materials +15

High-performance single-mode VCSELs in the 1310-nm waveband

V. Iakovlev, G. Suruceanu, A. Caliman et al. · IEEE Photonics Technology Letters · 2005 · 61 citations · Full text

Photonics, Electrical Engineering, High-performance Single-mode Vcsels +14

The electro-optic coefficients of GaAs: Measurements at 1.32 and 1.52 μm and study of their dispersion between 0.9 and 10 μm

C.-A. Berseth, C Wuethrich, F. K. Reinhart · Journal of Applied Physics · 1992 · 52 citations

Photonics, Electrical Engineering, Optical Materials +11

Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70 <formula formulatype="inline"><tex>$^{\circ}$</tex></formula>C

A. Mircéa, A. Caliman, V. Iakovlev et al. · IEEE Photonics Technology Letters · 2007 · 46 citations · Full text

Engineering, Vertical-cavity Surface-emitting Lasers, Surface-emitting Lasers +16

Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy

J.‐F. Carlin, A. Syrbu, C.-A. Berseth et al. · Applied Physics Letters · 1997 · 30 citations · Full text

Materials Science, Photonics, Optical Materials +14