Patterning PDMS using a combination of wet and dry etching

Abstract

PDMS films of 10 μm thickness can be patterned within 30 min by combining dry etching to achieve substantially vertical sidewalls with wet etching to achieve high etch rates and to protect the underlying substrate from attack. Dry etching alone would have taken 5 h, and wet etching alone would produce severe undercutting. In addition, using either technique alone produces undesirable surface morphologies. The mask used during etching is critical to a successful patterning outcome. E-beam evaporated Al was found to work well, adhering strongly to oxygen-plasma-treated PDMS and holding up well during both dry and wet etching. To prevent wrinkling of the PDMS, a fast deposition rate should be used. (Some figures in this article are in colour only in the electronic version)