Publication | Closed Access
Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents
35
Citations
4
References
2002
Year
Unknown Venue
Electrical EngineeringPower ModuleEngineeringCircuit AnalysisPower DeviceCeramics Backside MetallizationPower Semiconductor DeviceComputer EngineeringCircuit SimulationPower ElectronicsDcb-backside Eddy CurrentsMicroelectronicsEddy CurrentsElectromagnetic Compatibility
This paper deals with the parallel switching process of IGBTs in a power module. It is shown experimentally and by simulation that eddy currents in the direct copper bonding (DCB) ceramics backside metallization have an important influence on switching behaviour. An effective simulation tool based on the partial element equivalent circuit (PEEC) method is used to extract all inductive couplings for circuit modeling.
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