ECS Solid State Letters · 2012 · 20 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsThin FilmsCurrent-voltage CharacteristicsMemory DevicesMemristive MaterialsOxide SemiconductorsSemiconductor Thin FilmsThin Film Electrical PropertiesFilamentary Switching MechanismsHysteresisInsulator-to-metal TransitionMemristive MemoryMetal-insulator TransitionRandom-access MemoryResistive Random-access MemoryResistive Switching
Uniformity is by far an important issue for the application of resistive random access memory (RRAM). In this letter, we explore a prototype RRAM device for switching uniformity improvement. Compared toW/WO3-x/Pt structure, after the introduction of a thin NbOx film between WO3-x and Pt bottom electrode, the device exhibits much better resistive hysteresis and switching uniformity. The main composition of the interface layer is NbO2 suboxide showing insulator-metal phase transition. A combined filamentary conduction model is proposed to clarify the role of NbOx layer on the resistive switching stabilization during the forming process. (C) 2012 The Electrochemical Society.