A high power and high efficiency power amplifier for local multipoint distribution service

M. Siddiqui, Arvind Kumar Sharma, L. Callejo, Chung-Hsu Chen, Kin Tan, H.C. Yen

2002 · 13 citations · 3 references

Concepts

Abstract

This paper presents a high power and high efficiency MIC power amplifier using 0.2 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT (PHEMT) devices. The average performance of the power amplifier is 8.75 dB small signal gain, 39.6% power-added-efficiency, and 37 dBm (5.0 W) from 27.5 to 29.5 GHz. At these power levels, the output power density was 780 mW/mm including output circuit losses. This represents the highest output power and efficiency ever reported at Ka-band using MIC amplifiers.

References

3