2002 · 13 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersWide Band Gap SemiconductorsHigh-efficiency Power AmplifiersHigh-gain AmplifiersPower Added EfficiencyPower Amplifier DesignPower DensityPower OutputRadio Frequency Power AmplifiersSmall-signal Gain
This paper presents a high power and high efficiency MIC power amplifier using 0.2 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT (PHEMT) devices. The average performance of the power amplifier is 8.75 dB small signal gain, 39.6% power-added-efficiency, and 37 dBm (5.0 W) from 27.5 to 29.5 GHz. At these power levels, the output power density was 780 mW/mm including output circuit losses. This represents the highest output power and efficiency ever reported at Ka-band using MIC amplifiers.
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Ka-band high efficiency 1 watt power amplifier
Ka-band power PHEMT on-wafer characterization using prematched structures
Arvind Kumar Sharma, G.S. Dow, M. Aust et al. · 2002 · 12 citations