Ka-band power PHEMT on-wafer characterization using prematched structures

Abstract

High-power Ka-band power amplifiers have been developed using monolithic prematched structures utilizing power InGaAs pseudomorphic high-electron-mobility-transistor (PHEMT) devices. On-wafer load-pull impedance data on structures containing 0.15- mu m*400- mu m, 0.15- mu m*800- mu m, and 0.15- mu m*1600- mu m devices were obtained. Based on this information, a two-stage MIC (microwave integrated circuit) amplifier consisting of a single 1600- mu m monolithic prematched structure driving four 1600- mu m monolithic prematched structures was realized. The amplifier achieved an output power of 1.6 W (32.2 dBm) with 8.1 dB gain at 35 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>