IRE Transactions on Electron Devices · 1957 · 22 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsElectric CircuitsMetal-semiconductor ContactsP-n JunctionsSemiconductor ReliabilityWide Band Gap SemiconductorsAvalanche BreakdownAvalanche Breakdown In Wide-bandgap DevicesBreakdown CharacteristicsBreakdown MechanismsBreakdown VoltageJunction BreakdownJunction ModelingP-n Junction Characteristics
In certain p-n junctions, such as those made by the alloy method, edges on the junction surface will, by field concentration, lead to lower inverse breakdown voltages than would otherwise be obtained. These edges are approximated by pieces of circular cylinders, and a formula for the voltage breakdown of a circular cylindrical junction obtained. The results agree qualitatively with those found for certain alloy-type diodes.
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Avalanche Breakdown in Germanium
S. L. Miller · Physical Review · 1955 · 373 citations