IEEE Electron Device Letters · 1986 · 76 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit FabricationSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsWide Band Gap SemiconductorsHeterostructure TransistorsSiliconSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon Device MaterialsSilicon NitrideSilicon Thin Films
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid SiC film.
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Schottky barrier diodes on 3C-SiC
S. Yoshida, Katsuhiro Sasaki, E. Sakuma et al. · Applied Physics Letters · 1985 · 108 citations
Silicon carbide bipolar transistor
Waldemar von Münch, P. Hoeck · Solid-State Electronics · 1978 · 66 citations
Silicon carbide field-effect and bipolar transistors
W. von Muench, P. Hoeck, E. Pettenpaul · 1977 · 20 citations