IEEE Transactions on Nuclear Science · 2009 · 29 citations · 11 references
EngineeringComputer EngineeringComputer SystemsFault-tolerant ComputingMemorySemiconductor DevicesDevice CharacterizationDevice ReliabilityMemory DevicesStorage Fault ToleranceErase CyclingFlash MemoryFlash Memory DevicesFlash Memory ReliabilityMemory TestNand Flash MemoryNon-volatile Memory DesignRadiation-hardened Memory Devices
We report on new results of TID tests on an advanced 8-Gbit NAND-Flash memory. Data error percentage and standby current depend strongly on operational mode. Preventive memory refresh is proposed to move the first error occurrence to significant higher dose values. The count of erase cycles until wear out is not affected by the accumulated dose.
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Radiation effects on advanced flash memories
Duc N. Nguyen, S. M. Guertin, G.M. Swift et al. · IEEE Transactions on Nuclear Science · 1999 · 157 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +17
TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory
H. Schmidt, D. Walter, F. Gliem et al. · 2008 · 49 citations