IEEE Electron Device Letters · 2010 · 28 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptical Properties Of SemiconductorsRaman SpectroscopySemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsBlue Light-emitting DiodesGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesPiezoelectric PropertiesQuantum Well StructuresResidual StrainStrain Effects
The strain and piezoelectric fields in InGaN blue light-emitting diodes on a GaN layer, which is grown on a planar sapphire substrate or patterned sapphire substrates (PSSs), such as a microsized PSS and a nanosized PSS (NPSS), are investigated by micro-Raman spectroscopy and electroreflectance (ER) spectroscopy. The obtained piezoelectric field in InGaN multiple quantum wells (QWs) grown on the planar substrate is 0.83 MV/cm, and it is 0.70 MV/cm for the case of the NPSS. These results are attributed to the fact that the GaN layers on the PSSs have a smaller residual strain compared to that on the planar sapphire, and thus, strain reduction in the GaN layer can reduce the piezoelectric field in the InGaN QWs grown on top of it.
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Optical properties of GaN epilayers on sapphire
Magloire Tchounkeu, O. Briot, Bernard Gil et al. · Journal of Applied Physics · 1996 · 135 citations
Natural Sciences, Materials Engineering, Materials Science +17
Determination of the piezoelectric field in InGaN quantum wells
I.H. Brown, Iestyn Pope, Peter M. Smowton et al. · Applied Physics Letters · 2005 · 75 citations · Full text