IEEE Transactions on Microwave Theory and Techniques · 2006 · 19 citations · 22 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationDevice ModelingHigh-frequency Semiconductor DevicesMicrowave MeasurementsNonlinear Circuit AnalysisSmall-signal AnalysisEquivalent Circuit ModelingHigh-electron-mobility Transistor ModelingHigh-electron-mobility TransistorsNonlinear Static AnalysisSemiconductor Device ModelingSmall-signal Device ModelingSmall-signal Equivalent Circuit ModelsTransistor Nonlinearity
A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge-controlled approach. The model is based on the definition of a virtual quasi-static device, associated with the actual one, which is controlled by means of equivalent voltage sources. The advantage of this approach is that conventional purely quasi-static models can be still adopted even at very high frequencies, if suitable equivalent voltages are applied. Identification from small-signal measurements and implementation into commercially available computer-aided design tools of the new nonquasi-static model are described in this paper. Finally, by considering a GaAs p-high electron mobility transistor, accurate prediction capabilities at microwaves and millimeter frequencies are experimental verified and compared with a more conventional equivalent-circuit-based model
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GaAs FET device and circuit simulation in SPICE
H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 518 citations