Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention

Abstract

Phase-change memory alloys based on germanium, antimony, and tellurium with SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> target creating nanophase dielectric inclusions. The addition of the dielectric inclusions significantly increases the crystallization temperature without affecting the required programming current. In memory device configurations, the nanocomposite alloys exhibit a ten-year data retention above 200°C and a cycle life greater than 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cycles while maintaining the SET programming speed of 250 ns.