Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

Abstract

The amorphous oxide thin-film transistor (TFT)-oriented simulator [subgap Density of states (DOS)-based Amorphous Oxide TFT Simulator (DeAOTS)] is proposed, implemented, and demonstrated for amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs. It only consists of parameters having their physical meanings and is supplied with concrete techniques for parameter extraction. Among the physical parameters, the acceptor-like DOS <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gA</i> ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</i> ) was experimentally extracted using the multifrequency <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> - <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> technique, whereas the donor-like DOS <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gD</i> ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</i> ) and the doping concentration <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ND</i> were extracted using numerical iterations. The simulation result reproduces the DOS and thin-film-thickness-dependence of dc <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> - <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> characteristics very well. Compared with the previously reported a-Si TFT models, the proposed DeAOTS model not only reflects the strong <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> dependence of the effective mobility (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) but also clarifies the relations between process-controlled DOS parameters and dc <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> - <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> characteristics based on experimentally extracted DOS parameters. Also, it sufficiently takes into account the peculiar situation of amorphous oxide TFTs where the free-carrier charge can be larger than the localized one out of the total induced charge. Moreover, it reproduces the measured electrical characteristics within the wide range of <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> / <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> with a single equation, not distinguishing the operation regions such as the subthreshold, linear, and saturation regimes.