IEEE Transactions on Microwave Theory and Techniques · 1992 · 10 citations · 3 references
Low-power ElectronicsElectrical EngineeringEngineeringHigh Voltage EngineeringHigh-frequency DeviceElectronic EngineeringVoltage ApplicationEnhancement-mode PseudomorphicConventional Pseudomorphic HemtMicroelectronicsPower Electronic DevicesSuperior Saturation Properties
An enhancement-mode pseudomorphic inverted HEMT with short gate length shows superior saturation properties at low drain voltage. Such saturation properties are suitable for low-supplied-voltage applications. High-frequency properties of FETs were also studied, using two types of frequency-dependent measurement systems which represent active load and common-source circuits. It was confirmed that low knee voltage in the static I-V curve is preserved above 100 kHz. The estimated output power for the device is 50% higher than that of conventional pseudomorphic HEMT at supplied voltage of 1 V.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Characterization of GaAs devices by a versatile pulsed I-V measurement system
A. Platzker, A. Palevsky, Samuel Nash et al. · 2002 · 80 citations
High-speed, low-voltage complementary heterostructure FET circuit technology
R.A. Kiehl, J.R. Yates, L. F. Palmateer et al. · 2002 · 10 citations
Electrical Engineering, Semiconductor Device, Engineering +11