Dry Etching of Electronic Oxides, Polymers, and Semiconductors

Abstract

Abstract Summary: A review is given of commonly used plasma etching techniques and typical plasma chemistries for patterning electronic oxides, such as SiO 2 , HfO 2 , MgO, Sc 2 O 3 , and ZnO, polymers, and several important semiconductors (Si, GaAs, and InP). Issues that affect the reproducibility and manufacturability of etching processes, such as loading effects, endpoint detection, and etch selectivity, are also discussed. Finally, disruption to the etched surface in the form of polymer deposition, plasma residues, ion‐induced displacement damage, or preferential loss of one of the lattice elements during the etch process are covered. SEM micrograph of features etched into a ZnMgO/ZnO structure using a BCl 3 /Cl 2 /Ar ICP plasma. image SEM micrograph of features etched into a ZnMgO/ZnO structure using a BCl 3 /Cl 2 /Ar ICP plasma.