IEEE Microwave and Guided Wave Letters · 1998 · 28 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor HeterostructuresWide Band Gap SemiconductorsHeterostructure DevicesHigh-frequency ElectronicsHigh-frequency OperationLeakagePower OutputVoltage
We report on record performance in terms of efficiency and output power for an InP-based heterostructure barrier varactor (HBV) tripler. Owing to a step-like InGaAs/InAlAs/AlAs barrier scheme, the device exhibits excellent voltage handling with low leakage current (10 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) up to at least 5 V. A 4×12 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> finger-shaped device in a dual configuration yielded a delivered output power of 5 mW (5.4% conversion efficiency) at 216 GHz.
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