The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy

Unusual properties of the fundamental band gap of InN

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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

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Natural Sciences, Materials Engineering, Materials Science +14

Optical bandgap energy of wurtzite InN

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Natural Sciences, Materials Science, Physics +17

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

X. H. Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 458 citations

Engineering, Materials Engineering, Materials Science +17

Temperature dependence of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Journal of Applied Physics · 2003 · 395 citations · Full text

Engineering, Materials Science, Physics +17