The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy - Concepedia

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The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy

25

Citations

19

References

2006

Year

C.‐L. Wu, C.-H. Shen, Han‐Yi Chen, Shuo-Cheng Tsai, Hao‐Wu Lin, H.-M. Lee, Shangjr Gwo, Tung-Han Chuang, H.-S. Chang, T. M. Hsu

Journal of Crystal Growth

Materials ScienceSemiconductor TechnologyAln BufferEpitaxial GrowthEngineeringPhysicsInn Epitaxial FilmsApplied PhysicsPlasma-assisted Molecular-beam EpitaxySemiconductor MaterialThin FilmsSilicon On InsulatorMolecular Beam Epitaxy

References

	Year	Citations

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