H.-S. Chang

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Wen‐Hao Chang, An-Tai Chou, W. Y. Chen et al. · Applied Physics Letters · 2003 · 58 citations

Optical Materials, Engineering, Optoelectronic Devices +20

Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

Chi‐Kuang Chao, J.‐I. Chyi, C. N. Hsiao et al. · Applied Physics Letters · 2006 · 27 citations

Materials Science, Catalytic Material, Engineering +10

The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy

C.‐L. Wu, C.-H. Shen, Han‐Yi Chen et al. · Journal of Crystal Growth · 2006 · 25 citations

Materials Science, Semiconductor Technology, Aln Buffer +10

Designer Ge/Si composite quantum dots with enhanced thermoelectric properties

H.-S. Chang, Sih-Yuan Wang, Sheng-Wei Lee · Nanoscale · 2014 · 24 citations

Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition

Wen‐Hao Chang, Hsiang-Yu Chen, H.-S. Chang et al. · Applied Physics Letters · 2005 · 22 citations

Engineering, Semiconductor Nanostructures, Ii-vi Semiconductor +16