Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition

Abstract

Electroreflectance spectroscopy was used to study the effect of InxGa1−xAs capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the InxGa1−xAs capping layer were well resolved. The energy shifts in the InxGa1−xAs capping layer show a different trend as compared to a series of referent InxGa1−xAs quantum wells. These results support the concept of strain-driven alloy decomposition during the InxGa1−xAs layer overgrowth.