1988 · 43 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingPhotovoltaic DevicesSemiconductor Device MaterialsSemiconductor InterfacesSurface PhysicsCurrent DensityDiffusionsSaturation CurrentSaturation DensitySilicon Solar CellsSilicon Surface ScienceSolar Cell Device PhysicsSurface Recombination
The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm/sup 2/). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, J/sub o/, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized
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27.5-percent silicon concentrator solar cells
Ronald A. Sinton, Young Kwark, J.Y. Gan et al. · IEEE Electron Device Letters · 1986 · 200 citations