ECS Solid State Letters · 2014 · 35 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsSemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor Thin FilmsSilicon MaterialsThin-film DepositionThin-film MaterialsCrystalline StructureLow-temperature GrowthMagnetron SputteringSilicon Thin FilmsSputteringThermal StabilityThin-film Growth MechanismsX-ray Diffraction Analysis
Crystalline Ge1−xSnx films were successfully grown on Si (100) substrates by low-temperature magnetron sputtering, using a Ge thin film as a buffer layer. The resulting films were revealed to have a high crystalline quality by X-ray diffraction and transmission electron microscopy. The thermal stability of these films was also studied in detail, demonstrating that sputtered films with a Sn composition 0.06 are stable at 500°C. On the basis of these results, Ge1-xSnx films grown by sputtering appear to have great promise for the cost-effective fabrication of Si-based infrared devices.
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Ge–Sn semiconductors for band-gap and lattice engineering
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GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
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