2002 · 33 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsThin FilmsMemory DevicesMos CapacitorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film Materials3D Stacked MemoryCapacitanceCapacitorsDielectric ConstantEquivalent Oxide ThicknessHigh-density Memory MaterialsStep CoverageThin Oxide Films
Simple stacked cell capacitors for 1 Gbit DRAMs have been constructed with a thick storage node of ruthenium (Ru) and high dielectric constant CVD-(Ba,Sr)TiO/sub 3/ films of equivalent oxide thickness teq=0.50 nm with an excellent step coverage. A storage capacitance of 30 fF/cell was shown to be realized for storage nodes 0.24 /spl mu/m wide, 0.60 /spl mu/m deep, and 0.20 /spl mu/m high, with a charge loss below 19% of the initial stored charge during a pause-refresh time of 10 s in 1 Gbit DRAMs.
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