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Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS
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2002
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Low-power ElectronicsElectrical EngineeringEngineeringCmos Process CompatibilityNanoelectronicsApplied PhysicsSource/drain StructureNm Deep JunctionsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsOptoelectronicsSolid-phase DiffusionSemiconductor Device
A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance or capacitance. 0.1 /spl mu/m pMOSFETs with 20 nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. CMOS process compatibility was also confirmed.