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Internal quantum efficiency of GaN/AlGaN‐based multi quantum wells on different dislocation densities underlying layers
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2010
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SemiconductorsWide-bandgap SemiconductorElectrical EngineeringInternal Quantum EfficiencyEngineeringSemiconductor TechnologyPhysicsDifferent Dislocation DensitiesApplied PhysicsQuantum MaterialsElo MethodAluminum Gallium NitrideGan Power DeviceDislocation DensityGa 0.75Categoryiii-v SemiconductorMulti Quantum Wells
Abstract Internal quantum efficiency (IQE) of GaN/AlGaN multi quantum wells on the low dislocation density Al 0.25 Ga 0.75 N grown by epitaxial lateral overgrowth (ELO) and facet controlled epitaxial lateral overgrowth were investigated by excitation intensity dependent photoluminescence measurement. The threading dislocation density decreased from 4x10 9 cm ‐2 to 2x10 8 cm ‐2 by using ELO method, then the IQE was much improved from 5% to 40% when the carrier density was 1x10 18 cm ‐3 . (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)