Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Abstract

We have demonstrated the dc and rf characteristics of a novel p-n-p GaAs/InGaAsN/GaAs double heterojunction bipolar transistor. This device has near ideal current-voltage (I-V) characteristics with a current gain greater than 45. The smaller bandgap energy of the InGaAsN base has led to a device turn-on voltage that is 0.27 V lower than in a comparable p-n-p AlGaAs/GaAs heterojunction bipolar transistor. This device has shown f/sub T/ and f/sub MAX/ values of 12 GHz. In addition, the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.