IEEE Photonics Technology Letters · 1997 · 79 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsPhotonicsLaser DiodesLaser PhysicsQuantum Well DevicesQuantum WellsSemiconductor LasersWide-bandgap SemiconductorsCurrent DensityDifferential EfficiencyDifferential Quantum EfficiencyInterband Cascade LasersLow-threshold Current LasersQuantum Cascade LasersQuantum EfficiencyQuantum Well Lasers
We present an optimized design and detailed numerical simulations for a mid-IR type-II interband InGaSb QW cascade laser (T2ICL) with InAs-In/sub 0.3/Ga/sub 0.7/Sb active quantum wells. It is shown that a 15-period T2ICL operating at 300 K and emitting at 3.15 μm should achieve a much higher differential quantum efficiency (maximum of 0.9 W/A per facet at 300 K) than conventional mid-IR bipolar injection lasers, and a threshold current density much lower than for the intersubband quantum cascade laser.
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Type-II and type-I interband cascade lasers
J. R. Meyer, I. Vurgaftman, Rui Q. Yang et al. · Electronics Letters · 1996 · 163 citations
Natural Sciences, Electrical Engineering, Materials Science +11
Type II mid-infrared quantum well lasers
J. I. Malin, J. R. Meyer, C. L. Felix et al. · Applied Physics Letters · 1996 · 80 citations