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Type II mid-infrared quantum well lasers
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1996
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Optical PumpingPhotonicsAuger RecombinationEngineeringLaser SciencePhysicsSemiconductor LasersApplied PhysicsLaser ApplicationsQuantum Well LasersLaser ClassificationMid-infrared Laser TechnologyLaser MaterialsQuantum Photonic DeviceOptoelectronicsHigh-power LasersFour-constituent Type-iiOptical Amplifier
Pulsed, optically pumped four-constituent Type-II (InAs-Ga1−xInxSb-InAs-AlSb) quantum well lasers emitting at 3.9–4.1 μm were observed to lase up to 285 K with a characteristic temperature T0 of 35 K for 170 K ≤Top≤270 K. A theoretical analysis predicts dramatic further improvements once the potential for suppressing Auger recombination is fully realized.