Applied Physics Letters · 1995 · 90 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsLasersQuantum Well HeterostructuresQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser FabricationSuperlattice GrowthSuperlattice Materials
We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3–5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 Å /24 Å) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.