SEE sensitivity of a COTS GaN transistor and silicon MOSFETs

Abstract

Researches on prototype AlGaN/GaN transistors provided evidence for their tolerance to cumulated dose effects. However, only few studies have been done to evaluate their sensitivity to single event effects (SEE). This paper reports SEE test results on a commercial GaN high electron mobility transistor with 14 MeV neutron and heavy ion irradiations (N, Fe, Br, Xe). Results show that the component under test is not sensitive to single event burnout (SEB), however phenomenon similar to single event gate rupture (SEGR) was observed. The SEE test bench used for our experiments has been validated with measurement of SEB and SEGR on MOSFETs.