IEEE Electron Device Letters · 2010 · 31 citations · 15 references
PhotonicsElectrical EngineeringEngineeringRadiation DetectionPhysicsRts CharacteristicsElectronic EngineeringApplied PhysicsSingle Event EffectsRts Noise CharacterizationDark Count RateDetector PhysicPulse PowerSingle-photon Avalanche DiodesQuantum Photonic DeviceMicroelectronicsPhoton StatisticOptoelectronics
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-<formula formulatype="inline"><tex Notation="TeX">$\mu \hbox{m}$</tex></formula> CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature. </para>
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