High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz - Concepedia

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High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

35

Citations

11

References

2003

Year

V. Kumar, A. Kuliev, R. Schwindt, Maya Muir, G. Simin, J. Yang, M. Asif Khan, I. Adesida

Solid-State Electronics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower DensityHigh Performance 0.25Rf SemiconductorApplied PhysicsAluminum Gallium NitrideGan Power Device

References

	Year	Citations

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