Predictive Simulation of AlGaN/GaN HEMTs

Abstract

For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new generation HEMTs were performed. A good accuracy for all relevant characteristics in comparison to measurement results is achieved.