Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

Abstract

A model for NBTI is proposed based on disorder-controlled diffusion and drift in amorphous dielectrics. Experimental data on finFETs confirm all major predictions of the model: temperature dependence of the NBTI exponent, non-Arrhenius behavior of NBTI, log(t) and electric field dependencies of recovery. Experimental challenges with determining NBTI parameters are also highlighted.