High Quality Monolithic 8-Shaped Inductors for Silicon RF IC Design

Abstract

In this paper, RF characterization results of 8-shaped inductors on high resistivity silicon (HRS) substrate are presented. Electrical performances reported to area occupation of 8-shaped inductors are compared to those of classical octagonal/rectangular inductors. It is observed that 8-shaped inductors lead to inductance values 60% higher than what could be expected from classical octagonal/rectangular devices. A predictive electrical model is proposed based on previous investigations. Correlations between measurements and simulation data are found satisfactory.