IEEE Electron Device Letters · 1984 · 16 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesBarriersHigh-speed OperationIsolationSchottky Barrier CharacteristicsSchottky Barrier DiodesSchottky BarriersSchottky Contacts
An n-channel MOSFET with Schottky source and drain (SBMOSFET) has been successfully fabricated using tantalum for the Schottky electrodes. For long gatelengths (100 µm), there are no significant differences in the characteristics of these SBMOSFET's compared to those of conventional MOSFET's. A significant current reduction is observed in SBMOSFET's having 10-µm gatelengths, however, due to the barrier between source and channel. In spite of the substantial barrier height (0.7 V) between tantalum and p-silicon, still larger barriers and a reduction in the isolation gap between source and channel are desirable for high-drive-high-speed device operation.
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C.J. Koeneke, Simon M. Sze, Richard Levin et al. · 1981 · 31 citations