High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

Abstract

We demonstrate high-electron-mobility transistors (HEMTs) based on InAlN/GaN nanoribbon (NR) structures. These devices, with NR widths d in the 50-90 nm range, are fabricated through a top-down technology on planar InAlN/GaN samples grown on a SiC substrate. The electrical properties of the InAlN/GaN NRs have been characterized by transmission-line model measurements and in HEMT structures, and compared with similar planar devices fabricated in close proximity. External mechanical stress and adequate surface passivation have a great impact on the NRs' performance. For example, when a thin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> dielectric is used to passivate the surface and to introduce tensile stress in the NR devices, the sheet resistance in the NRs becomes up to ~46% lower than that in passivated planar structures. These enhanced transport properties resulted in NR HEMTs with ~20-45% higher raw current than that in planar HEMTs. The NR technology combined with strain-passivation engineering allows the fabrication of NR HEMTs with record current densities (~2.9 A/mm) in the InAlN/GaN material system.