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Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process

M. M. A. J. Voncken, J.J. Schermer, G Maduro, G.J. Bauhuis, P. Mulder, P.K. Larsen

Materials Science and Engineering B · 2002 · 50 citations · 16 references

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References

16

Extreme selectivity in the lift-off of epitaxial GaAs films

Eli Yablonovitch, T.J. Gmitter, J. P. Harbison et al. · Applied Physics Letters · 1987 · 801 citations · Full text

, , +10

Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

Eli Yablonovitch, D. M. Hwang, T.J. Gmitter et al. · Applied Physics Letters · 1990 · 403 citations

, , +12

High efficiency GaAs thin film solar cells by peeled film technology

Makoto Konagai, Mitsunori Sugimoto, Kiyoshi Takahashi · Journal of Crystal Growth · 1978 · 310 citations

, , +10

Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates

Eli Yablonovitch, E. Kapon, T.J. Gmitter et al. · IEEE Photonics Technology Letters · 1989 · 101 citations

, , +18

Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond

Eli Yablonovitch, T. Sands, D. M. Hwang et al. · Applied Physics Letters · 1991 · 96 citations

, , +15