IEEE Electron Device Letters · 2007 · 27 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsNanowiresSemiconductor PhysicsSemiconductor ReliabilityThermal Properties Of SemiconductorsBody EffectGate LeakageLeakageNanowire DevicesNanowire Field-effect TransistorsNanowire TransistorsSubthreshold SwingSubthreshold Swing Degradation
The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T </i> ranging from 4 to 300 K. The dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T </i> dependence of the peak normalized transconductance g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> /V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low values.
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