OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge

Anomalous Optical Absorption Limit in InSb

Elias Burstein · Physical Review · 1954 · 3.9K citations

Natural Sciences, Physics, Optics +10

The Interpretation of the Properties of Indium Antimonide

T. S. Moss · Proceedings of the Physical Society Section B · 1954 · 1.9K citations

Natural Sciences, Materials Science, Physics +15

Polar-on-nonpolar epitaxy

H. Kroemer · Journal of Crystal Growth · 1987 · 506 citations

Photoluminescence of Al<i>x</i>Ga1−<i>x</i>As alloys

Lorenzo Pavesi, M. Guzzi · Journal of Applied Physics · 1994 · 495 citations

Natural Sciences, Materials Science, Physics +17

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

R. Fischer, W. T. Masselink, John F. Klem et al. · Journal of Applied Physics · 1985 · 194 citations

Engineering, Electrical Engineering, Materials Science +16