2002 · 20 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice ReliabilityIon ImplantationSemiconductor ReliabilityFast Recovery DiodesIon Beam IrradiationIon Irradiation DamageIon Source PhysicsRadiation-hardening TechniquesRadiation-tolerant Semiconductor Devices
A novel approach to lifetime control in fast recovery power diodes, arbitrary axial lifetime profiles by single-step ion irradiation, is presented. The principle is based on irradiation through a single mask which is inserted between the ion source and the device. The density and lateral/axial structures of the mask determine the final lifetime profile. Experimental results show that this new technique is fully capable to replace multiple single-energy ion irradiations and to guarantee superior diode performance.
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