4.5 kV-fast-diodes with expanded SOA using a multi-energy proton lifetime control technique

Abstract

This paper presents a 4.5 kV diode fabricated using a new ion irradiation technique whereby electrons are replaced by protons in a second irradiation step. The second proton peak is located close to the middle of the n-base. Compared to the combined ion-electron irradiation, diodes with a double proton peak show a smaller maximum reverse-recovery current and a much smoother tail current behavior. The new device has an excellent ruggedness, and is able to withstand a peak power of 1 MW/cm/sup 2/.