IEEE Transactions on Nuclear Science · 1994 · 34 citations · 17 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials ChemistryRadiation PhysicsAmorphous MaterialsDefectsDefects In Electronic MaterialsRadiation Damage In MaterialsRadiation HardeningSemiconductor DefectsAmorphous OxidesOxide ChargeOxygen VacanciesOxygen Vacancy FormationRadiation Damage MechanismsRadiation-induced Charge TrappingRadiation-induced Defect FormationRadiation-induced Defects
We review our understanding of the structure of amorphous SiO/sub 2/ and the role of processing in inducing defect precursors. Five potential sources of positive trapped oxide charge and two of negative trapped charge are described. The most studied of these is the positively charged oxygen-vacancy center. Ionizing radiation is found to be /spl sim/1000 times less efficient than particle radiation in creating this defect. Various processing induced precursors of the defect and their transformation by radiation are discussed in detail. Macroscopic structural modifications induced by very large radiation doses (10/sup 9/ rad) are also discussed. Ionizing radiation is also found to be /spl sim/1000 times less efficient than particle radiation in inducing these modifications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Robert E. Stahlbush, Arthur H. Edwards, David L. Griscom et al. · Journal of Applied Physics · 1993 · 182 citations
Electron−hole pair creation energy in SiO2
G. A. Ausman, F. B. McLean · Applied Physics Letters · 1975 · 172 citations