IEEE Transactions on Electron Devices · 1995 · 40 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical DetectorsOptical Properties Of SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor DetectorsColor SensorsFull Width At Half MaximumHeterostructuresHydrogenated Amorphous SiliconP-i-n PhotodetectorsPhotodetectionResponsivityWavelength Selection
We describe a novel family of two-color photodetectors based on p-i-n-i-p heterostructures in hydrogenated amorphous Si/SiC. The devices operate as bias-controlled light detectors with enhanced absorption in either the blue or the red regions. Compared to other two-color sensors based on amorphous Si/SiC n-i-p-i-n structures, they exhibit sharper wavelength selection and higher rejection ratios with excellent quantum efficiencies: full width at half maximum (FWHM) less than 130 mm, suppression up to 27 dB, and peak responsivity of about 150 mA/W are reported for both the blue and the red window. Simulation of the photoresponse of the device under steady-state and time-dependent voltage bias and under continuous illumination is also presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Amorphous SiC/Si three-color detector
Hsiung‐Kuang Tsai, Si‐Chen Lee · Applied Physics Letters · 1988 · 65 citations